Related Experiment Video
Updated: Nov 21, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
One- and two-dimensional electrical contacts and transport properties in monolayer black phosphorene-Ni interface
Kehua Zhong1,2, Guigui Xu1,3, Yanmin Yang1,2
1Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, People's Republic of China.
Abstract:
Contacts between black phosphorene (BP) and metal electrodes are critical components of BP-based devices and can dramatically affect device performance. In this paper, we adopted first-principles calculations to explore binding energies, electronic structures, spatial potential distribution of monolayer BP-Ni interfaces in surface contact and edge contact types, and used density functional theoretical coupled with nonequilibrium Green's function method to investigate the electrical transport properties for transport systems of monolayer BP with Ni electrodes. Our calculated results indicate that contact type between monolayer BP and metal Ni electrodes may much affect the transport properties of monolayer BP-Ni devices. Interfacial interaction between Ni and monolayer BP in edge contact type is stronger than that in surface contact type. The potential distributions indicate that edge contact type is more beneficial for reducing contact resistance of monolayer BP-Ni contacts and conducive to improve the performance of BP-Ni electrode device.
Related Concept Videos
P-N junction
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

