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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
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Updated: Nov 21, 2025

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Engineering an Indium Selenide van der Waals Interface for Multilevel Charge Storage.

Yi-Ying Lu1, Yu-Ting Peng1, Yan-Ting Huang1

  • 1Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan.

ACS Applied Materials & Interfaces
|January 15, 2021
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel nonvolatile memory using indium selenide (InSe) and a van der Waals gate architecture. This device offers multilevel data storage with charge-trapping sites, overcoming limitations of traditional floating-gate transistors.

Keywords:
indium selenidenonvolatileoperando photoelectron spectroscopytrapvan der Waals interface

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Nanotechnology

Background:

  • Floating-gate transistors face physical limitations due to continuous miniaturization.
  • Novel device architectures and materials are crucial for next-generation nonvolatile memory.

Purpose of the Study:

  • To demonstrate a new nonvolatile memory structure utilizing a van der Waals gate architecture.
  • To explore the potential of indium selenide (InSe) for multilevel data storage.

Main Methods:

  • Fabrication of a van der Waals gate architecture with a partially oxidized surface layer/InSe interface.
  • Indirect oxygen plasma treatment to create charge-trapping sites on the InSe surface.
  • Operando scanning X-ray photoelectron spectroscopy and Kelvin probe microscopy to analyze device characteristics.

Main Results:

  • The device achieved multilevel data storage with eight distinct states retained over 3000 seconds.
  • A high current switching ratio of 10^6 was observed within 11 cycles.
  • Charge retention without a gate dielectric was demonstrated, attributed to engineered InSe interface properties.

Conclusions:

  • The engineered InSe interface enables nonvolatile memory functionality through charge-trapping sites and van der Waals gating.
  • This approach offers a promising alternative to conventional floating-gate memory technologies.
  • The device's characteristics suggest significant potential for advanced nonvolatile memory applications.