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Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc

Chan Sic Yoon1, Hyung Tae Kim1, Min Seong Kim1

  • 1School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.

ACS Applied Materials & Interfaces
|January 15, 2021
PubMed

Keywords:
In−Ga−Zn−Oamorphous oxide thin-film transistorsbias stress stabilitycarrier-induced interlayerfield-effect mobilityvertically graded oxygen deficiency

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