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Additive Lithography-Organic Monolayer Patterning Coupled with an Area-Selective Deposition
Rudy Wojtecki1, Jonathan Ma2, Isvar Cordova2
1International Business Machines-Almaden Research Center, 650 Harry Road, San Jose, California 95110, United States.
ACS Applied Materials & Interfaces
|January 20, 2021
Summary
Area-selective deposition (ASD) combined with patterned organic monolayers offers a new additive lithography method. This approach enables the creation of 50 nm nanoscale patterns, presenting an alternative to traditional subtractive methods.
Area of Science:
- Materials Science
- Nanotechnology
- Lithography
Background:
- Traditional additive lithography often relies on pre-patterned surfaces.
- Developing new methods for nanoscale feature generation is crucial for advanced manufacturing.
Purpose of the Study:
- To introduce a versatile additive lithography platform using area-selective deposition (ASD) and patternable organic monolayers.
- To demonstrate the generation of nanoscale features with high resolution.
Main Methods:
- Patterning of stearate hydroxamic acid self-assembled monolayers (SAMs) using extreme ultraviolet or electron beam irradiation.
- Utilizing density functional theory to optimize SAM synthesis for enhanced imaging contrast and dose sensitivity.
- Employing near-edge X-ray absorption fine structure and infrared spectroscopy to elucidate the imaging mechanism.
Main Results:
- Achieved line space patterns as small as 50 nm using the ASD and SAMs platform.
- Demonstrated selective monolayer formation on copper portions of patterned substrates.
- Confirmed that the imaging mechanism involves cross-linking of SAMs for improved deposition inhibition.
Conclusions:
- The combination of patternable monolayers with ASD provides a versatile additive lithography platform for nanoscale feature generation.
- This approach offers enhanced capabilities compared to traditional ASD methods.
- The developed additive lithography technique presents a viable alternative to subtractive nanoscale fabrication.
