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Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

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Related Experiment Video

Updated: Nov 20, 2025

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

Published on: December 27, 2012

Tunnel field-effect transistors for sensitive terahertz detection.

I Gayduchenko^1,2, S G Xu^3,4, G Alymov²

¹Physics Department, Moscow Pedagogical State University, Moscow, 119435, Russia.

Nature Communications

|January 23, 2021

Summary

Researchers developed novel terahertz (THz) detectors using bilayer graphene tunnel transistors. These devices efficiently convert THz waves to direct current, enabling advanced applications in wireless communication and sensing.

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Area of Science:

Solid State Physics
Materials Science
Electrical Engineering

Background:

Rectification of electromagnetic waves to direct currents is vital for energy harvesting and advanced communication systems.
Conventional electronics face limitations in converting high-frequency terahertz (THz) radiation due to challenges in AC-to-DC conversion.

Purpose of the Study:

To address the limitations of conventional electronics in THz frequency rectification.
To explore the potential of bilayer graphene (BLG) tunnel field-effect transistors (TFETs) for THz detection.

Main Methods:

Fabrication of lateral tunnel junctions using BLG TFETs.
Coupling the BLG tunnel junctions to an antenna for THz radiation exposure.
Investigating the device performance by switching between intraband Ohmic and interband tunneling regimes.

Main Results:

Achieved high responsivity (>4 kV/W) and low noise (0.2 pW/[Formula: see text]) THz detection.
Demonstrated a significant increase in detector responsivity by switching to the interband tunneling regime.
Validated experimental results with a developed theoretical model.

Conclusions:

BLG TFETs offer a promising platform for efficient THz detection.
The study highlights the potential of tunnel transistors for sub-terahertz applications.
This work paves the way for advanced THz sensing and communication technologies.