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Updated: Nov 20, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Manoj Tripathi1, Frank Lee1, Antonios Michail2,3
1Department of Physics and Astronomy, University of Sussex, Brighton BN1 9RH, United Kingdom.
Out-of-plane deformation in 2D materials like graphene and molybdenum disulfide significantly impacts their electronic and nanomechanical properties. This study reveals how different line defects influence strain, doping, and stiffness, offering insights for straintronic device engineering.
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