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Updated: Nov 19, 2025
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Experimental Methods for Spin- and Angle-Resolved Photoemission Spectroscopy Combined with Polarization-Variable Laser
Published on: June 28, 2018
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Spin polarization in lateral two-dimensional heterostructures
1Electrical Engineering Department, Islamic Azad University, Central Tehran Branch, Tehran, Iran.
Summary
Spin polarization in MoS(Se)2-WS(Se)2 heterostructures can be induced using transverse electric fields and bias voltage. Light is not always necessary to achieve significant spin polarization in these materials.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Mechanics
Background:
- Transition metal dichalcogenide (TMD) heterostructures like MoS(Se)2-WS(Se)2 are promising for spintronic applications.
- Understanding and controlling spin polarization is crucial for developing novel electronic devices.
Purpose of the Study:
- To investigate the spin polarization phenomena in MoS(Se)2-WS(Se)2 heterostructures.
- To explore methods for inducing and enhancing spin polarization in these materials.
Main Methods:
- Utilized the non-equilibrium Green's function (NEGF) method.
- Employed a three-band tight-binding model near the Brillouin zone edges.
- Applied transverse electric fields and bias voltages.
Main Results:
- No significant spin polarization was observed in a specific electron energy range without external stimuli.
- Applying a transverse electric field, light, and a small bias voltage created significant spin polarization.
- Noticeable spin polarization was achieved with bias voltage and electric field, even without light.
Conclusions:
- External electric fields and bias voltages are effective in controlling spin polarization in MoS(Se)2-WS(Se)2 heterostructures.
- These findings offer pathways for designing spintronic devices based on TMDs.
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