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Updated: Nov 19, 2025

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers
Published on: October 5, 2013
Magnetism and magnetoresistance in the critical region of a dilute ferromagnet
M Wang1, B Howells2, R A Marshall2
1School of Physics and Astronomy, University of Nottingham, University Park, Nottingham, NG7 2RD, UK. mu.wang@nottingham.ac.uk.
Abstract:
We present detailed experimental measurements and simulations of the field-dependent magnetization and magnetoresistance in the vicinity of the Curie temperature in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As. The observed dependence of the magnetization on external magnetic field and temperature is consistent with three-dimensional Heisenberg equation of state calculations including a narrow distribution of critical temperatures. The magnetoresistance shows a peak at the Curie temperature due to the suppression of magnetic scattering in an applied magnetic field, which is well-described by considering changes in the square of the magnetization induced by the magnetic field.
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