Pseudo-Edelstein effect in disordered silicene

The 'pseudo-Edelstein' effect by which charge currentJconverts to pseudo-spin polarization,τ, has been investigated theoretically for an infinite sheet of silicene. Calculations have been performed for conductor phase of silicene within the Dirac point approximation and in the presence of normally applied electric field. The latter conversion as an outcome of voltage-texture correlation in buckled silicene has been considered as 'pseudo-Edelstein'response function. This response function have been calculated in the context of Kubo formalism in the presence of vertex corrections. It has been verified that the charge current results in normal pseudo-spin polarization i.e. sublattice population imbalance. According to obtained results in the presence of vertex corrections, 'pseudo-Edelstein' response function is weakened by several orders of magnitude with non-identical different valley contributions. In addition, extra small oscillations of obtained response function have been observed. Nevertheless, when the vertex corrections is off, the 'pseudo-Edelstein' response function is strengthened by several orders of magnitudes with the same different valleys contributions and the extra small oscillations of obtained response function are disappeared. These findings show that 'pseudo-Edelstein' response function is weakened by the intrinsic Rashba spin-orbit interaction which originally arises from buckling in silicene. As silicene has the lowest buckling among the graphene-like Dirac materials so it can be expected that 'pseudo-Edelstein' effect could be realized in a more pronounced manner in silicene. Obviously, this novel type of conversion not only can be employed in the future data transfer technology but also opens a sensible way to control of electrons populations electrically in realistic disordered silicene samples. The optical absorption spectroscopy could be taken as an efficient experimental plan of action by which the results of present work can be checked out.