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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Pseudo-Edelstein effect in disordered silicene.

R Baghran1, M M Tehranchi1, A Phirouznia2,3

  • 1Department of Physics, Shahid Beheshti University, Evin 198-3963113, Tehran, Iran.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|January 29, 2021
PubMed
Summary

The pseudo-Edelstein effect converts charge current to pseudo-spin polarization in silicene. Vertex corrections significantly weaken this effect, unlike in its absence, highlighting silicene

Keywords:
pseudo-Edelsteinpseudo-spinsilicenevertex corrections

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • The pseudo-Edelstein effect describes the conversion of charge current to pseudo-spin polarization.
  • Silicene, a graphene-like material, exhibits unique electronic properties due to its buckled structure and spin-orbit interactions.
  • Understanding charge-to-spin conversion mechanisms is crucial for developing next-generation electronic devices.

Purpose of the Study:

  • To theoretically investigate the pseudo-Edelstein effect in an infinite sheet of silicene.
  • To analyze the influence of vertex corrections and intrinsic Rashba spin-orbit interaction on this effect.
  • To explore the potential applications of the pseudo-Edelstein effect in silicene for data transfer and electrical control of electron populations.

Main Methods:

  • Theoretical calculations performed for the conductor phase of silicene using the Dirac point approximation.
  • Application of a normally applied electric field to induce the pseudo-Edelstein response.
  • Utilized the Kubo formalism with and without vertex corrections to compute the response function.

Main Results:

  • Charge current induces normal pseudo-spin polarization (sublattice population imbalance) in silicene.
  • Vertex corrections significantly weaken the pseudo-Edelstein response function by several orders of magnitude, with non-identical valley contributions.
  • The pseudo-Edelstein response function is strengthened by orders of magnitude when vertex corrections are absent, and oscillations disappear.

Conclusions:

  • The intrinsic Rashba spin-orbit interaction, arising from silicene's buckling, weakens the pseudo-Edelstein response function.
  • Silicene, with its low buckling, is a promising material for observing a pronounced pseudo-Edelstein effect.
  • This effect offers potential for future data transfer technologies and electrical control of electron populations in disordered silicene.