Related Experiment Video
Updated: Nov 19, 2025

09:43
Transmission of Multiple Signals through an Optical Fiber Using Wavefront Shaping
Published on: March 20, 2017
10.1K
Electrical cross talk of a frequency division multiplexing readout for a transition edge sensor bolometer array
Q Wang1, P Khosropanah2, J van der Kuur1
1SRON Netherlands Institute for Space Research, 9700 AV Groningen, The Netherlands.
The Review of Scientific Instruments
|January 30, 2021
Summary
We mapped electrical cross talk (ECT) in a frequency division multiplexing (FDM) system for space applications. Most pixels showed low ECT (<0.4%), demonstrating viable FDM technology for sensitive instruments.
Area of Science:
- Astrophysics and Space Science
- Electrical Engineering
- Sensor Technology
Background:
- Transition edge sensor (TES) bolometer arrays are crucial for space applications requiring high sensitivity.
- Frequency division multiplexing (FDM) is explored for multiplexing signals from large arrays.
- Electrical cross talk (ECT) is a critical parameter affecting the performance of multiplexed sensor arrays.
Purpose of the Study:
- To characterize and map the electrical cross talk (ECT) in a 61-pixel TES bolometer array using an FDM system.
- To assess the feasibility of FDM technology for space applications by quantifying ECT levels.
- To identify sources of significant ECT and propose mitigation strategies.
Main Methods:
- A modulation technique at 120 Hz was applied to one bolometer's AC bias voltage.
- Simultaneous measurement of cross talk response in the current noise spectra of other bolometers.
- Mapping of ECT across a 61x61 matrix with carrier frequencies from 1 MHz to 4 MHz and 32 kHz spacing.
Main Results:
- Approximately 94% of pixels exhibited ECT levels below 0.4%, with most below 0.1%.
- Adjacent pixels showed the highest ECT levels, reaching up to 0.4%.
- Higher ECT levels (up to 10%) were observed in pixels with bundled, parallel coplanar wires due to high mutual inductance.
Conclusions:
- FDM systems can achieve low ECT levels suitable for space applications, around 0.4% with 30 kHz frequency spacing.
- Bundled coplanar wires are a significant source of ECT and should be replaced with microstrip wires.
- The study successfully demonstrates the potential of FDM technology for low-electrical cross talk space applications.
More Related Videos
Related Concept Videos
Biasing of FET
470
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
470
¹³C NMR: ¹H–¹³C Decoupling
1.4K
The probability of having two carbon-13 atoms next to each other is negligible because of the low natural abundance of carbon-13. Consequently, peak splitting due to carbon-carbon spin-spin coupling is not observed in spectra. However, protons up to three sigma bonds away split the carbon signal according to the n+1 rule, resulting in complicated spectra.
A broadband decoupling technique is used to simplify these complex, sometimes overlapping, signals. Broadband decoupling relies on a...
A broadband decoupling technique is used to simplify these complex, sometimes overlapping, signals. Broadband decoupling relies on a...
1.4K
Biasing of Metal-Semiconductor Junctions
430
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
430
Field Effect Transistor
809
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
809
Cut-off Frequency of BJT
1.1K
Cut-off frequencies in Bipolar Junction Transistors (BJTs) mark the transition between the signal's pass band and stop band, influencing their performance in amplifying or attenuating frequencies. These frequencies are crucial for designing BJTs to meet specific operational requirements in electronic circuits.
Alpha Cut-Off Frequency: Pertinent to the common-base configuration, the alpha cut-off frequency defines the upper-frequency limit at which the current gain, alpha, remains stable. As...
Alpha Cut-Off Frequency: Pertinent to the common-base configuration, the alpha cut-off frequency defines the upper-frequency limit at which the current gain, alpha, remains stable. As...
1.1K
Bode Plots Construction
937
The Bode plot is an essential tool in control system analysis, mapping the frequency response of a system through a magnitude plot and a phase plot, both against a logarithmic frequency axis. To construct a Bode plot, consider the transfer function H(ω):
937

