Benchmarking monolayer MoS₂ and WS₂ field-effect transistors

Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS₂ and WS₂ films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS₂ FETs and 160 WS₂ FETs with channel lengths ranging from 5 μm down to 100 nm. We use statistical measures to evaluate key FET performance indicators for benchmarking these two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers against existing literature as well as ultra-thin body Si FETs. Our results show consistent performance of 2D FETs across 1 × 1 cm² chips owing to high quality and uniform growth of these TMDs followed by clean transfer onto device substrates. We are able to demonstrate record high carrier mobility of 33 cm² V^-1 s^-1 in WS₂ FETs, which is a 1.5X improvement compared to the best reported in the literature. Our experimental demonstrations confirm the technological viability of 2D FETs in future integrated circuits.