Partially Crystallized Ultrathin Interfaces between GaN and SiN Grown by Low-Pressure Chemical Vapor Deposition and...

The formation mechanism of the partially crystallized ultrathin layer at the interface between GaN and SiN grown by low-pressure chemical vapor deposition was analyzed based on the chemical components of reactants and products detected by high-resolution sputter depth profile analysis by X-ray photoelectron spectroscopy. A reasonable mass action equation for the formation of Si₂N₂O was proposed from the feasibility analysis of the Gibbs free energy changes of the reaction. The high-energy-activated Ga₂O on the surface likely assists in the synthesis of the crystallized components. A well-defined 1ML θ-Ga₂O₃ transition interface was inserted into Si₂N₂O/GaN pure interface supercell slabs to edit the unsaturated state of the bonds. Low-density states can be achieved when the effective charges of the unsaturated atoms are adjusted to a certain interval.