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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
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Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Jie Gu1,2, Qingzhu Zhang1, Zhenhua Wu1,2

  • 1Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China.

Nanomaterials (Basel, Switzerland)
|February 3, 2021
PubMed

Keywords:
Si nanowirecryo-CMOSgate-all-aroundone-dimensional hole transport

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