Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Interfacial Electronic Modulation and Sensing Mechanisms of CO, C<sub>2</sub>F<sub>4</sub>, and COF<sub>2</sub> on MO<sub>x</sub>-Modified V<sub>2</sub>CF<sub>2</sub> MXene for C<sub>4</sub>F<sub>7</sub>N Decomposition Gas Monitoring.

Inorganic chemistry·2026

Same author

Density Functional Theory Study of Metal-Cluster-Modified Indium Selenide Monolayers for Transformer Oil Gas Sensing.

Langmuir : the ACS journal of surfaces and colloids·2026

Same author

Theoretical DFT Screening of a Nb<sub>2</sub>CO<sub>2</sub>-NbSSe Heterointerface for NH<sub>3</sub> and CO<sub>2</sub> Sensing in Animal Husbandry Environments: MXene-Based Adsorption Mechanisms and Selectivity Analysis.

Inorganic chemistry·2026

Same author

NiO and CuO Decorated Janus PtSeTe for Transformer Fault Gas Detection.

Langmuir : the ACS journal of surfaces and colloids·2026

Same author

SF<sub>6</sub> Decomposition Gas Sensing on an AlN/Janus MoSeTe Heterostructure: A Density Functional Theory Study.

Langmuir : the ACS journal of surfaces and colloids·2026

Same author

First-Principles Study on the Gas Sensing Performance of Transition Metals (Co, Rh, and Ir) Modified TaS<sub>2</sub> for SF<sub>6</sub> Decomposition Gases.

Langmuir : the ACS journal of surfaces and colloids·2025

Search research articles

Related Experiment Video

Updated: Nov 19, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

First-Principle Insight into Ga-Doped MoS₂ for Sensing SO₂, SOF₂ and SO₂F₂.

Wenjun Hou¹, Hongwan Mi¹, Ruochen Peng¹

¹College of Engineering and Technology, Southwest University, Chongqing 400715, China.

Nanomaterials (Basel, Switzerland)

|February 3, 2021

Summary

Gallium-doped Molybdenum disulfide (Ga-MoS2) shows promise as a gas sensor for detecting sulfur dioxide (SO2) and sulfuryl fluoride (SO2F2) decomposition gases in electrical equipment.

Keywords:

Ga-MoS2 adsorption properties density functional theory sulfur hexafluoride

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Related Experiment Videos

Last Updated: Nov 19, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Area of Science:

Materials Science
Computational Chemistry
Nanoscience

Background:

Sulfur hexafluoride (SF6) is a widely used insulator in electrical equipment, but its decomposition products pose environmental and safety risks.
Developing effective gas sensors for detecting SF6 decomposition gases is crucial for monitoring the health of electrical equipment.
Molybdenum disulfide (MoS2) is a promising 2D material for gas sensing applications.

Purpose of the Study:

To investigate the potential of Gallium-doped MoS2 (Ga-MoS2) as a gas-sensing material for SF6 decomposition products.
To theoretically simulate and analyze the adsorption properties of SO2, SOF2, and SO2F2 on Ga-MoS2 monolayers.
To provide a theoretical foundation for the development of novel gas sensors for electrical equipment.

Main Methods:

First-principle calculations based on Density Functional Theory (DFT).
Optimization of pure MoS2 and gas molecules (SF6, SO2, SOF2, SO2F2) to their most stable structures.
Simulation of Ga dopant adsorption at various positions on MoS2, with preferential adsorption at the top of the Mo atom (TMo).

Main Results:

Ga-MoS2 exhibits favorable adsorption for SO2 and SO2F2, indicating potential for sensing these gases.
Adsorption of SOF2 on Ga-MoS2 is weak, suggesting it is not suitable for SOF2 sensing.
The study identified the preferred adsorption sites and configurations for the target gases on the Ga-MoS2 monolayer.

Conclusions:

Ga-MoS2 is a promising candidate for developing gas sensors to detect SO2 and SO2F2, crucial for electrical equipment safety.
The theoretical insights gained can guide the experimental synthesis and application of Ga-MoS2-based gas sensors.
Further research could explore optimizing Ga-MoS2 for enhanced sensitivity and selectivity towards specific SF6 decomposition gases.