Dual-functional optoelectronic memories based on ternary hybrid floating gate layers

Area of Science:

• Materials Science
• Electronics
• Nanotechnology

Background:

• Optoelectronic memories based on organic field-effect transistors (OFETs) show promise but typically offer single storage functions.
• Existing devices lack the multi-functional capabilities required for future advanced storage applications.

Purpose of the Study:

• To demonstrate dual-functional optoelectronic memories with both light and electrical programming capabilities.
• To integrate hole trapping and photoinduced electron trapping mechanisms into a single device.

Main Methods:

• Utilized ternary hybrid films incorporating [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and CsPbBr3 quantum dots (QDs) as floating gate layers.
• Investigated the complementary charge trapping properties of PCBM and CsPbBr3 QDs for dual-functionality.

Main Results:

• Achieved dual-functional storage with electric programming of holes and light programming of electrons in one device.
• Demonstrated a short light erasing time of 0.05 s and a low erasing gate bias of -35 V.
• Observed good endurance over 500 cycles and long retention times (10,000 s) for both electrons and holes.

Conclusions:

• The developed dual-functional optoelectronic memories offer a novel approach for multi-functional data storage.
• The integration of PCBM and CsPbBr3 QDs provides a feasible pathway for next-generation memory devices.