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Thickness-Attuned CsPbBr3 Nanosheets with Enhanced p-Type Field Effect Mobility.
Arnab Mandal1, Anima Ghosh1, Satyaprasad P Senanayak2,3
1Department of Chemical Sciences and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER), Kolkata, Mohanpur 741246, India.
The Journal of Physical Chemistry Letters
|February 3, 2021
Summary
Researchers developed thickness-tunable nanosheet (NS) transistors from cesium lead bromide (CsPbBr3) for advanced electronics. These NS transistors show significantly enhanced field-effect mobility, paving the way for future semiconductor scaling.
Area of Science:
- Materials Science
- Nanoscience
- Semiconductor Physics
Background:
- Field-effect transistors (FETs) are crucial for semiconductor scaling, with nanosheet (NS) transistors representing a key advancement.
- Orthorhombic CsPbBr3 nanosheets (NSs) offer tunable thickness and lateral dimensions for next-generation electronic devices.
Purpose of the Study:
- To synthesize thickness-tunable orthorhombic CsPbBr3 NSs with controlled lateral dimensions.
- To investigate the impact of NS morphology on charge carrier transport and field-effect mobility.
- To explore the potential of CsPbBr3 NSs for fulfilling Moore's Law scaling.
Main Methods:
- Synthesis of CsPbBr3 NSs using varying carbon-chain ligands (18-carbon vs. 8-carbon) to control thickness.
- Characterization of NS morphology, including lateral dimensions and thickness (∼4.5 nm vs. ∼9.2 nm).
- Measurement of field-effect mobility (μFET) in photoexcited NSs at 200 K.
Main Results:
- Achieved thickness-tunable CsPbBr3 NSs with lateral dimensions up to 1 μm.
- Demonstrated an order of magnitude increase in field-effect mobility compared to CsPbBr3 nanocubes.
- Reported a p-type field-effect mobility of 10⁻⁵ cm²/Vs at 200 K.
Conclusions:
- Designing two-dimensional morphology in CsPbBr3 NSs significantly enhances charge carrier transport.
- The developed NSs exhibit properties suitable for advanced semiconductor applications, addressing challenges like ionic screening.
