High-kerbium oxide film prepared by sol-gel method for low-voltage thin-film transistor

In this work, high-dielectric-constant (high-k) erbium oxide（Er₂O₃）film is fabricated using the spin coating method, and annealed at a series of temperatures (from 400 °C to 700 °C). The effect of annealing temperature on the microstructural and electrical properties of Er₂O₃nanofilm is investigated. To demonstrate the applicability of the Er₂O₃film, the indium oxide (In₂O₃) thin film transistor (TFT)-based amorphous Er₂O₃dielectric film is fabricated at different temperatures. The TFT-based EO-600 shows a low-operating voltage and good electrical properties. The inverter demonstrates that the Er₂O₃nanofilm synthesized by the sol-gel method could be a promising candidate as the dielectric layer in a low-voltage electronic device.