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Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Updated: Nov 18, 2025

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Suppressing the efficiency droop in the AlGaN-based UVB LED.

Usman Muhammad¹, Shahzeb Malik², Muhammad Ajmal Khan³

¹Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi,, Sawabi, Khyber Pakhtunkhwa, 23640, PAKISTAN.

|February 10, 2021

Summary

This study enhances ultraviolet-B (UVB) light-emitting diodes (LEDs) for medical uses by reducing efficiency droop. Optimized structures significantly improve performance and hole injection in the active region.

Keywords:

AlGaN Light-emitting diodes Quantum Wells

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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Published on: June 25, 2020

Area of Science:

Optoelectronics and semiconductor physics.
Materials science of nitride semiconductors.
Photonics and device engineering.

Background:

Aluminum gallium nitride (AlGaN)-based ultraviolet-B (UVB) light-emitting diodes (LEDs) are vital for medical applications like cancer therapy and immunotherapy.
Efficiency droop and poor hole injection in UVB LEDs limit their practical performance.
Understanding and mitigating these issues are critical for advancing UVB LED technology.

Purpose of the Study:

To numerically investigate AlGaN-based UVB LEDs for efficiency droop suppression and enhanced hole injection.
To analyze the impact of an undoped (ud)-AlGaN final barrier (FB) and a Mg-doped multiquantum barrier electron blocking layer (p-MQB EBL).
To evaluate the influence of Al-composition in the p-AlGaN hole source layer (HSL) on operating voltages.

Main Methods:

Numerical simulations were employed to model and compare device performance.
Key performance metrics including internal quantum efficiency (IQE), carrier concentration, energy band diagrams, and radiative recombination rates were evaluated.
The proposed device structure was compared against a conventional reference structure.

Main Results:

The proposed UVB LED structure demonstrated significantly lower efficiency droop (7% vs. 42%) compared to the conventional structure.
A substantial increase in the radiative recombination rate within the multiquantum wells (MQWs) by up to ~73% was observed.
Electron and hole concentrations in the active region were enhanced by ~64% and ~13%, respectively.

Conclusions:

The optimized structure, incorporating ud-AlGaN FB and p-MQB EBL, effectively suppresses efficiency droop in AlGaN-based UVB LEDs.
Enhanced carrier concentrations and radiative recombination rates contribute to improved device performance.
The findings pave the way for more efficient UVB LEDs for critical medical applications.