Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

P-N junction01:11

P-N junction

844
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
844
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.3K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.3K
Schottky Barrier Diode01:27

Schottky Barrier Diode

673
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
673
Diode: Forward bias01:20

Diode: Forward bias

1.7K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
1.7K
Diode: Reverse bias01:14

Diode: Reverse bias

1.3K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
1.3K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

600
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
600

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

A Rare Masquerade: Primary Parotid Lymphoma Mimicking a Parotid Neoplasm in a Young Female Patient.

Cureus·2026
Same author

A new and eco-friendly disinfectant for antimicrobial-resistant bacteria: ozone nano water.

BMC microbiology·2026
Same author

Enhancing the potential of a Cs<sub>0.1</sub>MA<sub>0.9</sub>PbI<sub>3</sub> perovskite layer through the suspension of pure and vanadium-doped metal sulphides for solar cells.

Dalton transactions (Cambridge, England : 2003)·2026
Same author

Sustainable Bamboo-Based Magnetic Activated Carbon for Adsorption of Cationic and Anionic Dyes from Wastewater: Kinetics, Isotherms, and Thermodynamics.

Materials (Basel, Switzerland)·2026
Same author

Assessment of Acetabular Fracture Fixation with the Modified Harris Hip Score Regarding Clinical and Functional Outcomes.

Journal of the College of Physicians and Surgeons--Pakistan : JCPSP·2026
Same author

Enhanced bifunctional water splitting kinetics in the metal organic framework-derived CoFeCu-incorporated Ni-coated carbon nanotube electrocatalyst.

Journal of colloid and interface science·2026

Related Experiment Video

Updated: Nov 17, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.9K

NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode.

Muhammad Hussain1, Syed Hassan Abbas Jaffery1, Asif Ali1

  • 1Department of Nanotechnology and Advanced Materials Engineering, and HMC, Sejong University, Seoul, 05006, South Korea.

Scientific Reports
|February 12, 2021
PubMed
Summary

This study introduces a new two-dimensional heterostructure, p-GeSe/n-MoSe2, exhibiting tunable rectifying behavior and self-powered photovoltaic properties for advanced electronics and optoelectronics.

More Related Videos

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

8.0K
Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

7.7K

Related Experiment Videos

Last Updated: Nov 17, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.9K
Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

8.0K
Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

7.7K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) heterostructures with atomically sharp interfaces are crucial for next-generation electronics and optoelectronics due to their versatile functionalities.
  • Van der Waals (vdW) heterojunctions offer unique electronic and optoelectronic properties stemming from their layered structure and controlled interfaces.

Purpose of the Study:

  • To demonstrate the gate-tunable rectifying behavior and self-powered photovoltaic characteristics of a novel p-GeSe/n-MoSe2 vdW heterojunction (vdW HJ).
  • To investigate the performance metrics of the p-GeSe/n-MoSe2 vdW HJ for potential applications in optoelectronics.

Main Methods:

  • Fabrication of p-GeSe/n-MoSe2 vdW heterojunctions.
  • Electrical characterization under varying gate biases to assess rectification behavior.
  • Photovoltaic performance evaluation under near-infrared (NIR) light illumination.

Main Results:

  • The p-GeSe/n-MoSe2 vdW HJ exhibited significant gate-tunable rectification, reaching a ratio of ~1x10^4 at Vg = -40 V.
  • The device showed a strong photoresponse to NIR light (850 nm) with high photoresponsivity (465 mA/W), excellent external quantum efficiency (EQE) of 670%, and fast response times (180 ms rise, 360 ms decay).
  • Exceptional performance metrics were achieved, including high detectivity (7.3x10^9 Jones), a large normalized photocurrent to dark current ratio (NPDR) of 1.9x10^10 W^-1, and a low noise equivalent power (NEP) of 1.22x10^-13 WHz^-1/2.

Conclusions:

  • The sharp interface in the p-GeSe/n-MoSe2 p-n diode is responsible for its remarkable rectification behavior.
  • The demonstrated self-powered photovoltaic characteristics and high photoresponse indicate the potential of this vdW HJ for advanced multi-functional optoelectronic devices.