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Semiconductors

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

Biasing of FET

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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

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Related Experiment Video

Updated: Nov 17, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor-Structure Devices.

Zheng-Dong Luo¹, Ming-Min Yang², Yang Liu³

¹Department of Physics, The University of Warwick, Coventry, CV4 7AL, UK.

Advanced Materials (Deerfield Beach, Fla.)

|February 12, 2021

Summary

This summary is machine-generated.

Two-dimensional (2D) semiconductors combined with ferroelectrics offer revolutionary device concepts. This 2D semiconductor/ferroelectric heterostructure platform promises enhanced performance for complementary metal-oxide-semiconductor (CMOS) technologies and new electronic applications.

Keywords:

2D semiconductors ferroelectrics nanodevices nonvolatile memories transistors

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Published on: April 8, 2018

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Traditional bulk semiconductors face fundamental limitations.
Two-dimensional (2D) semiconductors offer novel atomic-limit properties.
Ferroelectric materials provide unique functionalities for electronic devices.

Purpose of the Study:

To review recent advancements in 2D semiconductor/ferroelectric heterostructures.
To analyze working mechanisms, device construction, and applications.
To highlight opportunities for next-generation electronics.

Main Methods:

Critical review of recent research on 2D semiconductor/ferroelectric heterostructures.
Analysis of device concepts, including transistors, memories, and neuromorphic devices.
Discussion of CMOS-process compatibility and emerging applications.

Main Results:

2D semiconductor/ferroelectric heterostructures enable novel device principles.
Enhanced device performance for existing complementary metal-oxide-semiconductor (CMOS) technologies.
Potential for beyond-Boltzmann transistors, nonvolatile memories, and neuromorphic devices.

Conclusions:

2D semiconductor/ferroelectric heterostructures represent a promising platform for innovation.
This emergent heterogeneous platform can drive advancements beyond current silicon-based electronics.
Future applications include reconfigurable nanodevices and self-powered systems.