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Interface atom mobility and charge transfer effects on CuO and Cu2O formation on Cu3Pd(111) and Cu3Pt(111)
Yasutaka Tsuda1,2, Jessiel Siaron Gueriba3,4, Takamasa Makino5
1Department of Chemistry, Osaka University, Toyonaka, Osaka, 560-0043, Japan. tsuda.yasutaka@jaea.go.jp.
Abstract:
We bombarded [Formula: see text] and [Formula: see text] with a 2.3 eV hyperthermal oxygen molecular beam (HOMB) source, and characterized the corresponding (oxide) surfaces with synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS). At [Formula: see text], CuO forms on both [Formula: see text] and [Formula: see text]. When we increase the surface temperature to [Formula: see text], [Formula: see text] also forms on [Formula: see text], but not on [Formula: see text]. For comparison, [Formula: see text] forms even at [Formula: see text] on Cu(111). On [Formula: see text], [Formula: see text] forms only after [Formula: see text], and no oxides can be found at [Formula: see text]. We ascribe this difference in Cu oxide formation to the mobility of the interfacial species (Cu/Pd/Pt) and charge transfer between the surface Cu oxides and subsurface species (Cu/Pd/Pt).
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