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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

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Published on: July 2, 2012

Solution-Doped Polysilicon Passivating Contacts for Silicon Solar Cells.

Xinbo Yang^1,2, Jingxuan Kang², Wenzhu Liu³

¹College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Soochow University, Suzhou 215006, China.

ACS Applied Materials & Interfaces

|February 16, 2021

Summary

A novel solution-doping method simplifies the creation of high-quality polycrystalline silicon passivating contacts for solar cells. This technique achieves excellent performance metrics, offering a promising alternative to traditional doping methods.

Keywords:

coannealing passivating contact polycrystalline silicon solar cell solution doping

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Area of Science:

Materials Science
Semiconductor Physics
Renewable Energy

Background:

Passivating contacts are crucial for improving solar cell efficiency by reducing recombination losses.
Traditional doping methods for polycrystalline silicon (poly-Si) passivating contacts can be complex and costly.
Developing efficient and scalable doping processes is essential for advancing solar energy technology.

Purpose of the Study:

To introduce a simple and efficient solution-doping process for preparing high-quality poly-Si passivating contacts.
To optimize n-type and p-type solution doping and thermal annealing parameters.
To fabricate crystalline silicon (c-Si) solar cells using these passivating contacts and evaluate their performance.

Main Methods:

Spin-coating commercial phosphorus or boron-doping solutions onto c-Si wafers with SiO₂/poly-Si layers.
Activating the doping process via high-temperature thermal annealing in a nitrogen atmosphere.
Fabricating c-Si solar cells with opposite polarity poly-Si passivating contacts using a coannealing process.

Main Results:

Achieved low contact recombination parameters (J_0c) of 2.4 fA/cm² (n-type) and 12 fA/cm² (p-type).
Obtained low contact resistivities (ρ_c) of 29 mΩ·cm² (n-type) and 20 mΩ·cm² (p-type).
Fabricated c-Si solar cells reached a power conversion efficiency (PCE) of 18.5% on a planar substrate.

Conclusions:

The solution-doping method is a simple, efficient, and promising alternative to gas/ion implantation for poly-Si passivating-contact manufacturing.
This process enables the fabrication of high-performance solar cells with enhanced passivation and conductivity.
The developed technique holds potential for scalable and cost-effective production of advanced solar energy devices.