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Doping Graphene with Substitutional Mn.

Pin-Cheng Lin1, Renan Villarreal1, Simona Achilli2

  • 1Quantum Solid State Physics, KU Leuven, 3001 Leuven, Belgium.

ACS Nano
|February 17, 2021
PubMed
Summary
This summary is machine-generated.

We successfully incorporated manganese (Mn) atoms into graphene on copper, creating a material ideal for studying magnetism and electron interactions. Ultralow-energy ion implantation is a viable method for magnetic doping of graphene.

Keywords:
dopingelectronic structuregrapheneion implantationmagnetismmanganese

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Surface Science

Background:

  • Epitaxial graphene on Cu(111) exhibits unique electronic properties, including a Dirac-like band structure.
  • Introducing magnetic dopants into graphene is crucial for spintronic applications.
  • Controlling the precise atomic location and concentration of dopants is essential for understanding their effects.

Purpose of the Study:

  • To incorporate substitutional manganese (Mn) atoms into epitaxial graphene on Cu(111) using ultralow-energy ion implantation.
  • To characterize the atomic structure and concentration of substitutional Mn.
  • To investigate the electronic properties of Mn-doped graphene and its potential for studying magnetic phenomena.

Main Methods:

  • Ultralow-energy ion implantation of Mn atoms into graphene on Cu(111).
  • Detailed atomic structure characterization, including Mn position relative to the Moiré superstructure and carbon sublattice.
  • Quantification of Mn concentration and assessment of structural disorder.
  • Measurement of electronic properties to determine the effect of Mn doping on the Dirac band structure.

Main Results:

  • Substitutional Mn atoms were successfully incorporated into graphene, primarily located slightly below the graphene layer (towards the Cu surface).
  • The concentration of substitutional Mn was quantified to be around 0.04% with minimal additional structural disorder.
  • Graphene doped with Mn retained its Dirac-like band structure, indicating preservation of key electronic properties.
  • Ultralow-energy ion implantation was confirmed as a suitable technique for substitutional magnetic doping of graphene.

Conclusions:

  • Ultralow-energy ion implantation enables precise substitutional magnetic doping of graphene.
  • Mn-doped graphene on Cu(111) retains its Dirac band structure, offering a platform for exploring magnetic interactions with Dirac electrons.
  • This method provides a flexible, reproducible, and scalable approach for magnetic functionalization of graphene and other 2D materials.