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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
François Fillion-Gourdeau1,2, Emmanuel Lorin3,4, Steve MacLean1,2,5
1Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1.
We mathematically modeled low-energy electrons on strained graphene surfaces using the Dirac equation. Our methods simplify calculations and show strained graphene can focus electron wave packets.
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