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Updated: Nov 16, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Low-Temperature 2D/2D Ohmic Contacts in WSe2 Field-Effect Transistors as a Platform for the 2D Metal-Insulator
Lily J Stanley1,2, Hsun-Jen Chuang3, Zhixian Zhou3
1National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States.
Abstract:
We report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multiterminal WSe2 Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal-insulator transition. We demonstrate that the WSe2 devices exhibit Ohmic behavior down to 0.25 K and at low enough excitation voltages to avoid current-heating effects. Additionally, the high-quality hBN-encapsulated WSe2 devices in ideal Hall-bar geometry enable us to accurately determine the carrier density. Measurements of the temperature (T) and density (ns) dependence of the conductivity σ(T, ns) demonstrate scaling behavior consistent with a metal-insulator quantum phase transition driven by electron-electron interactions but where disorder-induced local magnetic moments are also present. Our findings pave the way for further studies of the fundamental quantum mechanical properties of 2D transition metal dichalcogenides using the same contact engineering.
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