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Study of patterned GaAsSbN nanowires using sigmoidal model.

Sean Johnson1, Rabin Pokharel2, Michael Lowe1

  • 1Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC, 27411, USA.

Scientific Reports
|February 26, 2021
PubMed
Summary

Researchers developed patterned dilute nitride GaAsSbN nanowires on silicon, achieving significant bandgap tuning. This breakthrough offers a new method for designing optimal nanowire arrays for advanced materials.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Dilute nitride alloys like GaAsSbN are crucial for optoelectronic devices.
  • Patterned nanowire growth on silicon substrates is challenging but offers integration advantages.

Purpose of the Study:

  • To report the first successful growth of patterned dilute nitride GaAsSbN nanowires on p-Si (111) substrates.
  • To investigate the effect of pitch length on nanowire growth and optical properties.
  • To explore the potential of sigmoidal fitting for optimizing nanowire array design.

Main Methods:

  • Self-catalyzed plasma-assisted molecular beam epitaxy (MBE) for nanowire synthesis.
  • Fabrication of patterned nanowire arrays with varying pitch lengths (200-1200 nm).
  • 4 K photoluminescence (PL) spectroscopy to characterize bandgap tuning and optical properties.

Main Results:

  • Achieved vertical GaAsSbN nanowire arrays with optimal yield using a 3% Sb composition stem.
  • Demonstrated significant bandgap tuning of ~75 meV by varying pitch length.
  • Observed a unique logistic sigmoidal growth trend in axial and radial growth rates, differing from non-nitride III-V nanowires.
  • Linked PL spectral shifts to Sb and N incorporation variations influenced by pitch-dependent secondary fluxes.

Conclusions:

  • Sigmoidal fitting is a powerful tool for designing patterned nanowire arrays with optimal pitch lengths.
  • This approach is applicable to dilute nitrides and other highly mismatched alloys and heterostructures.
  • The study provides a foundation for developing novel optoelectronic devices based on patterned GaAsSbN nanowires on silicon.