Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance...

Area of Science:

• Materials Science
• Nanotechnology
• Electronics

Background:

• Solution-processed transition metal dichalcogenides (TMDs) are key for printed electronics.
• Device performance is hindered by structural defects and poor inter-flake connectivity.

Purpose of the Study:

• To introduce a molecular strategy for enhancing the electrical performance of TMD-based devices.
• To address sulfur vacancies and improve inter-flake electronic connectivity.

Main Methods:

• Utilized dithiolated conjugated molecules to functionalize TMDs.
• Simultaneously healed sulfur vacancies and covalently bridged adjacent flakes.
• Fabricated and tested liquid-gated transistors.

Main Results:

• Achieved a tenfold increase in field-effect mobility (µFE) to 10⁻² cm² V⁻¹ s⁻¹.
• Improved current ratio (ION/IOFF) to 10⁴ and switching time (τS) to 18 ms.
• Demonstrated reproducible enhancement in device performance.

Conclusions:

• The molecular strategy effectively heals defects and enhances inter-flake connectivity in TMDs.
• This approach provides a universal method to improve TMD network properties for various applications.
• Significant advancements in printed optoelectronics are enabled by this technique.