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Updated: Nov 16, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Study of Thermal Expansion Coefficient of Graphene via Raman Micro-Spectroscopy: Revisited
Qianchi Feng1, Dongshan Wei2, Yudan Su1
1State Key Laboratory of Surface Physics and Key Laboratory of Micro- and Nano-Photonic Structures (MOE), Department of Physics, Fudan University, Shanghai, 200433, China.
Abstract:
The thermal expansion coefficient (TEC) of a 2D material is a fundamental parameter for both material property and applications. A joint study is hereby reported, using Raman microspectroscopy and molecular dynamics (MD) simulations, of the substrate effects on thermal properties of graphene. It is found that besides the lateral strain induced by the substrate, out-of-plane coupling strongly affects the temperature-dependent vibrational modes and TEC of graphene. MD simulation shows significant reduction of the density of states for longer wavelength out-of-plane vibrations when the graphene is supported on an alkane substrate. The negative TEC of freestanding graphene becomes smaller when out-of-plane rippling is suppressed. In order to measure TEC of 2D materials with the out-of-plane coupling being taken into consideration, a Raman microspectroscopic scheme to separate the contributions of lateral strain and out-of-plane coupling to TEC is developed. The TEC of graphene on octadecyltrichlorosilane substrate is found to be (-0.6 ± 0.5) × 10-6 K-1 at room temperature, which is fundamentally smaller than that of freestanding graphene. These results shed light on the fundamental understanding of the interaction between 2D material and substrate, and offer a general recipe for studying separately in-plane and out-of-plane couplings on supported materials.
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