Self-powered and high responsivity photodetector based on a n-Si/p-GaTe heterojunction

Area of Science:

• Materials Science
• Optoelectronics
• Semiconductor Devices

Background:

• Two-dimensional/three-dimensional material heterojunctions offer promising optoelectronic properties.
• Key characteristics include fast response, high specific detectivity, and broad spectral response.

Purpose of the Study:

• To design and fabricate a vertical n-Si/p-GaTe heterojunction.
• To evaluate its performance for optoelectronic device applications.

Main Methods:

• Fabrication of a vertical n-Si/p-GaTe heterojunction.
• Characterization of its optoelectronic properties, including responsivity, response time, specific detectivity, and spectral response.

Main Results:

• Achieved high responsivity of 5.73 A W⁻¹.
• Demonstrated a fast response time of 20 μs at zero bias.
• Obtained a specific detectivity of 10¹² Jones.
• Observed a broad spectral response from 300 to 1100 nm.

Conclusions:

• The n-Si/p-GaTe heterojunction exhibits excellent performance due to efficient light absorption, internal photocurrent gain, and a strong built-in electrical field.
• This heterojunction presents a viable strategy for developing high-performance, self-powered optoelectronic devices.