Efficient p-n Heterojunction Perovskite Solar Cell without a Redundant Electron Transport Layer and Interface Engineering
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Updated: Nov 16, 2025
Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Like Huang1, Jiahao Wang1, Yuejin Zhu1,2
1Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, Zhejiang 315211, China.
Abstract:
We report an electron transport layer-free perovskite solar cell (PSC) without interface engineering, whose key is a p-n heterojunction consisting of ITO/n-type FA0.9Cs0.1PbI3-Cl/p-type spiro-MeOTAD/Ag. The naturally matched energy levels between FA0.9Cs0.1PbI3-Cl and ITO make interface engineering unnecessary. The FA0.9Cs0.1PbI3-Cl film has a wide antisolvent processing window, favoring large-area production. The self-seeding growth method regulates the energy levels and work function of the FA0.9Cs0.1PbI3-Cl film via modulating the shape and distribution of residual PbI2. Interface band bending is confirmed by double-side photoluminescence (PL) measurement. Reduced PL is introduced for unambiguous charge transfer analysis without interference caused by different absorbance. Accordingly, enhanced ITO/perovskite interface energy level alignment and device performance (efficiency of 17.48% and Voc of 1.02 V) are demonstrated. Such simplified but efficient PSCs featuring a wide antisolvent processing window have great potential in practical applications.
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