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Related Concept Videos

Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Biasing of P-N Junction01:16

Biasing of P-N Junction

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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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Schottky Barrier Diode01:27

Schottky Barrier Diode

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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Diode: Forward bias01:20

Diode: Forward bias

1.7K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
1.7K
Diode: Reverse bias01:14

Diode: Reverse bias

1.3K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
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Updated: Nov 15, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

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One-Dimensional van der Waals Heterojunction Diode.

Ya Feng1, Henan Li1, Taiki Inoue1,2

  • 1Department of Mechanical Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan.

ACS Nano
|March 1, 2021
PubMed
Summary
This summary is machine-generated.

Researchers created a novel 1D van der Waals heterostructure nanotube. This semiconductor-insulator-semiconductor device exhibits a rectifying effect, paving the way for advanced electronics.

Keywords:
boron nitride nanotubesheterojunction diodemolybdenum disulfideone-dimensional heterostructuresingle-walled carbon nanotubesvan der Waals

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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Condensed Matter Physics

Background:

  • One-dimensional (1D) van der Waals heterostructures offer unique properties for miniaturized electronics.
  • Natural doping in materials like single-walled carbon nanotubes (SWCNTs) and molybdenum disulfide (MoS2) leads to p-type and n-type characteristics, respectively.
  • Conventional contacts can influence material properties, necessitating novel assembly methods.

Purpose of the Study:

  • To demonstrate a novel 1D van der Waals heterostructure with a coaxial semiconductor-insulator-semiconductor assembly.
  • To investigate the electrical properties and potential applications of this 1D heterostructure.

Main Methods:

  • Coaxial assembly of semiconducting SWCNT, insulating boron nitride nanotube (BNNT), and semiconducting MoS2 nanotube.
  • Fabrication of an 11 nm wide heterostructure nanotube.
  • Electrical characterization under applied potential polarity.

Main Results:

  • Successful synthesis of a 1D van der Waals heterostructure nanotube.
  • Formation of a radial semiconductor-insulator-semiconductor heterojunction.
  • Observation of a rectifying effect when opposite potentials were applied to the SWCNT and MoS2 components.

Conclusions:

  • The synthesized 1D heterostructure nanotube exhibits promising rectifying behavior.
  • This structure provides a new platform for 1D electronic and optoelectronic devices.
  • Further exploration of 1D heterostructures can lead to advanced miniaturized electronic applications.