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Updated: Nov 15, 2025

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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Author Correction: Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage
Jian Zhi1,2, Min Zhou3, Zhen Zhang4
1State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, P. R. China.
Nature Communications
|March 2, 2021
Abstract
No abstract available in PubMed .
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