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Momentum-resolved visualization of electronic evolution in doping a Mott insulator
Cheng Hu1,2,3, Jianfa Zhao1,2, Qiang Gao1,2
1National Lab for Superconductivity, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
Nature Communications
|March 2, 2021
Summary
Doping Mott insulators with electrons causes the Mott gap to collapse, revealing new low-energy states crucial for high-temperature superconductivity in cuprates. This study visualizes the electronic evolution during doping.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid-State Chemistry
Background:
- High-temperature superconductivity in cuprates is linked to doping parent Mott insulators.
- Understanding the evolution of the Mott gap and low-energy states with doping is critical.
Purpose of the Study:
- To investigate the evolution of the Mott gap and emergent low-energy states in cuprates upon electron doping.
- To directly visualize the charge transfer band and Mott gap region during sequential in situ electron doping.
Main Methods:
- Angle-resolved photoemission spectroscopy (ARPES) measurements.
- Sequential in situ electron doping of a cuprate parent compound.
Main Results:
- A slight electron doping shifts the chemical potential to the upper Hubbard band, enabling visualization of the charge transfer band and Mott gap.
- Increasing doping rapidly collapses the Mott gap via spectral weight transfer.
- New low-energy states emerge within the Mott gap over a broad energy range.
Conclusions:
- The study provides crucial insights into the electronic evolution of Mott insulators upon doping.
- These findings offer a foundation for developing microscopic theories of cuprate superconductivity.
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