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Solution-Processed MoS2 Film with Functional Interfaces via Precursor-Assisted Chemical Welding.

Jihyun Kim1, Seongchan Kim2, Yun Seong Cho1

  • 1School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.

ACS Applied Materials & Interfaces
|March 4, 2021
PubMed
Summary

Chemically welding molybdenum disulfide (MoS2) nanosheets improves electrical conductivity by over 200%. This precursor-assisted method also enhances MoS2 films for photodetection and hydrogen evolution reactions.

Keywords:
broadband photodetectorchemical weldinghydrogen evolution reactionmolybdenum disulfidesolution processing

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Chemistry

Background:

  • Molybdenum disulfide (MoS2) has promising properties for advanced applications.
  • Scalable production of MoS2 is hindered by processing challenges.
  • Solution-processed MoS2 films suffer from poor electrical properties due to numerous interfaces.

Purpose of the Study:

  • To develop a scalable processing method for high-quality MoS2 films.
  • To enhance the electrical conductivity of solution-processed MoS2.
  • To introduce new functionalities in MoS2 films via interface engineering.

Main Methods:

  • Solution processing of MoS2 nanosheets.
  • Precursor-assisted chemical welding of MoS2 nanosheets.
  • Formation of defective MoS2- at nanosheet interfaces.

Main Results:

  • Achieved over 2 orders of magnitude improvement in electrical conductivity.
  • Reduced electrical contact resistances at nanosheet interfaces.
  • Demonstrated broadband photodetection and enhanced electrocatalytic activity for hydrogen evolution.

Conclusions:

  • Precursor-assisted chemical welding is a facile route to high-quality MoS2 films.
  • Defective MoS2- interfaces enable multifunctionalities in electronics, optoelectronics, and electrocatalysis.
  • This method overcomes limitations of traditional solution processing for MoS2.