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Hall Coefficient of Semimetals
Abhisek Samanta1, Daniel P Arovas2, Assa Auerbach1
1Physics Department, Technion, Haifa 32000, Israel.
Physical Review Letters
|March 5, 2021
Summary
A new formula for the Hall coefficient is applied to semimetals and semiconductors. This reveals deviations from standard models linked to electronic band structures and Fermi surface topology.
Area of Science:
- Condensed matter physics
- Solid-state physics
- Materials science
Background:
- The Hall coefficient is a fundamental property in condensed matter physics.
- Understanding its behavior in novel materials like semimetals is crucial.
- Existing models may not fully capture complex electronic structures.
Purpose of the Study:
- To apply a new Hall coefficient formula to various electronic systems.
- To investigate deviations from conventional theories.
- To link these deviations to specific material properties.
Main Methods:
- Application of a recently developed Hall coefficient formula.
- Analysis of nodal line and Weyl semimetals, including graphene.
- Examination of spin-orbit split semiconductor bands in 2D and 3D.
- Reduction of calculations to a ratio of equilibrium susceptibilities.
Main Results:
- The formula simplifies to a ratio of equilibrium susceptibilities under weak disorder.
- Deviations from Drude's inverse carrier density are identified.
- These deviations are correlated with band degeneracies, Fermi surface topology, and interband currents.
Conclusions:
- The new formula provides insights into the Hall coefficient of complex materials.
- Deviations offer a probe into electronic band structure and topology.
- Experimental verification of these predictions is proposed.
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