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Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator

Yuan-Ming Chen1, Hsien-Cheng Lin2, Kuan-Wei Lee3

  • 1Institute of Electro-Optical Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan.

Materials (Basel, Switzerland)
|March 6, 2021
PubMed

Keywords:
InAshigh-electron-mobility transistor (HEMT)inverted-typemetal-oxide-semiconductor (MOS)

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