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Microwave Photonics Systems Based on Whispering-gallery-mode Resonators
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An electrically driven whispering gallery polariton microlaser.

Mingming Jiang1, Peng Wan1, Kai Tang1

  • 1College of Science, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, P. R. China. mmjiang@nuaa.edu.cn cxkan@nuaa.edu.cn.

Nanoscale
|March 8, 2021
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel semiconductor polariton device using Ga-doped ZnO microwires. This breakthrough enables efficient near-infrared microlaser emission, paving the way for advanced optoelectronics.

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Quantum Physics

Background:

  • Low-dimensional semiconductors are crucial for integrated optoelectronics and on-chip technologies.
  • Existing near-infrared semiconductor microlasers face challenges with low quantum efficiency and Auger recombination.
  • Developing efficient, low-threshold coherent light sources remains a significant research objective.

Purpose of the Study:

  • To experimentally realize a current-injection semiconductor polariton device for near-infrared emission.
  • To demonstrate strong exciton-polariton coupling and electrically driven lasing.
  • To explore the potential of ZnO microwires in advanced microlaser applications.

Main Methods:

  • Fabrication of Ga-doped ZnO microwires (ZnO:Ga MW) on a p-type GaAs template.
  • Characterization using angle-resolved electroluminescence measurements.
  • Analysis of exciton-cavity mode coupling and lasing phenomena.

Main Results:

  • Observation of polaritonic illumination emitted from the edges of ZnO:Ga MW.
  • Experimental evidence of strong exciton-polariton coupling with a Rabi splitting energy of ~195 meV.
  • Achievement of electrically driven whispering gallery lasing in the near-infrared spectrum attributed to the exciton-polariton effect.

Conclusions:

  • The study successfully demonstrates a novel semiconductor polariton device based on ZnO:Ga MW.
  • The results highlight the potential of exciton-polariton effects for developing low-threshold coherent light sources.
  • This work contributes to the advancement of low-dimensional, near-infrared microlaser fabrication.