High-Detectivity Perovskite Photodetector Using Combustion-Processed NiO as p-Type Buffer Layer.

Area of Science:

• Materials Science
• Optoelectronics
• Device Physics

Background:

• Photodetectors are crucial optoelectronic devices.
• Nickel oxide (NiO) is a common hole transport layer material.
• Sol-gel processing of NiO requires high temperatures and can impact device performance.

Purpose of the Study:

• To investigate the fabrication of a photodetector device using NiO films prepared via sol-gel and combustion processes.
• To compare the performance of photodetectors utilizing NiO films from different fabrication methods.
• To analyze the impact of NiO film quality on photodetector characteristics.

Main Methods:

• Fabrication of a photodetector device with the structure ITO/NiO/Perovskite/PC60BM/BCP/Ag.
• Deposition of NiO films using sol-gel and combustion methods.
• Characterization of device performance through current-voltage measurements, transient photocurrent analysis, and impedance spectroscopy.

Main Results:

• Combustion-processed NiO films exhibited lower annealing temperatures and improved perovskite film quality compared to sol-gel processed films.
• Devices using combustion-processed NiO showed enhanced charge transfer and reduced dark current.
• The photodetector achieved a high detectivity of 1.20×10^13 Jones and a bandwidth exceeding 2 MHz.

Conclusions:

• The combustion process is a superior method for fabricating NiO films for photodetector applications.
• Improved NiO film quality directly translates to enhanced photodetector performance, including higher detectivity and faster response times.
• This work presents a promising approach for developing high-performance perovskite-based photodetectors.