You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Nov 14, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
1School of Physics, Northeast Normal University, Changchun 130024, China.
Researchers studied exciton and biexciton states in a single gallium arsenide (GaAs) quantum dot. Power-dependent photoluminescence revealed distinct power factors for biexciton and exciton states, with a notable energy difference observed.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: