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Room-Temperature Spin Transport in Cd3As2.
Gregory M Stephen1, Aubrey T Hanbicki1, Timo Schumann2
1Laboratory for Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740, United States.
Cd3As2 films exhibit robust spin transport at room temperature, paving the way for energy-efficient spintronic devices. This research demonstrates efficient charge-to-spin conversion and long spin-coherence lengths for advanced electronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Increasing transistor density approaches atomic limits, causing energy loss and reduced efficiency.
- Spintronic devices utilize electron spin for potentially higher performance and energy efficiency.
- Novel materials are crucial for efficiently harnessing electron spin in spintronics.
Purpose of the Study:
- To investigate spin transport properties of Cd3As2 films.
- To demonstrate the potential of Cd3As2 for spintronic applications.
- To explore charge-to-spin conversion efficiency and spin coherence in Cd3As2.
Main Methods:
- Fabrication of Cd3As2 films.
- Nonlocal spin valve measurements.
- Inverse spin Hall effect measurements.
Main Results:
- Robust spin transport observed in Cd3As2 films up to room temperature.
- Demonstrated a nonlocal spin valve switch using Cd3As2.
- Achieved high spin Hall angles (up to 1.5) and significant spin diffusion lengths (10-40 μm).
Conclusions:
- Cd3As2 exhibits long spin-coherence lengths and efficient charge-to-spin conversion at room temperature.
- Coherent spin transport in Cd3As2 is demonstrated, crucial for spintronic device realization.
- Cd3As2 is a promising material for developing next-generation energy-efficient spintronic devices.
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