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High-frequency rectifiers based on type-II Dirac fermions.

Libo Zhang1,2, Zhiqingzi Chen1, Kaixuan Zhang1,2

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|March 12, 2021
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Researchers developed efficient rectifiers using topological semimetal NiTe2. These devices convert high-frequency electromagnetic energy into direct current, showing high room-temperature photosensitivity for potential applications in sensing and communications.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Phenomena

Background:

  • Topological semimetals offer unique electronic properties due to symmetry protection.
  • Exploiting these properties can lead to novel electronic devices.
  • NiTe2 is a topological semimetal with low-energy Dirac fermions.

Purpose of the Study:

  • To develop efficient homogeneous rectifiers for converting high-frequency electromagnetic energy into direct current.
  • To investigate the performance of devices based on the topological semimetal NiTe2.
  • To explore the potential of topological states in high-frequency applications.

Main Methods:

  • Fabrication of rectifiers using the topological semimetal NiTe2.
  • Characterization of device performance, including photosensitivity and photocurrent anisotropy.
  • Measurement of device response at room temperature and high frequencies (0.3 THz).

Main Results:

  • Achieved state-of-the-art efficiency in the first implementation of NiTe2-based rectifiers.
  • Demonstrated high room-temperature photosensitivity (251 mA/W) in an unbiased mode.
  • Observed a significant photocurrent anisotropy ratio of 22, attributed to spin-polarized surface and bulk states.

Conclusions:

  • NiTe2-based rectifiers exhibit excellent performance, validating the potential of topological semimetals for high-frequency applications.
  • The control of nonequilibrium gapless topological states is crucial for device performance.
  • These findings open avenues for polarization-sensitive sensing, communications, and imaging technologies.