Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

657
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
657
P-N junction01:11

P-N junction

830
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
830
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

646
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
646

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Metamaterial-enhanced near-field radiative heat transfer.

Nature·2026
Same author

Noninvasive detection and prognostic stratification of biliary tract cancer using cell-free DNA fragmentomics: a model development and validation study.

Molecular biomedicine·2026
Same author

Breastfeeding in infancy confers sex-specific, long-term protection against metabolic dysfunction-associated steatohepatitis and adverse liver outcomes.

Biology of sex differences·2026
Same author

Ultra-low field <sup>13</sup>C MRI of hyperpolarized pyruvate.

Communications chemistry·2026
Same author

Breast imaging with ultra-low field MRI.

Scientific reports·2026
Same author

Dynamics of Serum Hepatitis B Virus Nucleic Acids in Patients With Chronic Hepatitis B After Stopping Nucleos(t)ide Analogs Reveal Delayed Rebound of Hepatitis B Virus RNA.

Journal of medical virology·2025

Related Experiment Video

Updated: Nov 14, 2025

Electroactive Polymer Nanoparticles Exhibiting Photothermal Properties
10:16

Electroactive Polymer Nanoparticles Exhibiting Photothermal Properties

Published on: January 8, 2016

14.1K

Heterogeneous irradiated-pristine polyethylene nanofiber junction as a high-performance solid-state thermal diode.

Xiao Luo1, Yuxuan Luan1, Yutian Cai1

  • 1Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA.

Scientific Reports
|March 12, 2021
PubMed
Summary

This study introduces novel solid-state thermal diodes using irradiated-pristine polyethylene nanofibers. These junctions demonstrate efficient heat flux rectification, with performance influenced by temperature bias and phase transition characteristics.

More Related Videos

Application of a Coupling Agent to Improve the Dielectric Properties of Polymer-Based Nanocomposites
06:34

Application of a Coupling Agent to Improve the Dielectric Properties of Polymer-Based Nanocomposites

Published on: September 19, 2020

6.0K
Author Spotlight: Advancing Energy Solutions Using Nanocomposites as Processed Thermoelectric Materials
09:23

Author Spotlight: Advancing Energy Solutions Using Nanocomposites as Processed Thermoelectric Materials

Published on: May 17, 2024

1.9K

Related Experiment Videos

Last Updated: Nov 14, 2025

Electroactive Polymer Nanoparticles Exhibiting Photothermal Properties
10:16

Electroactive Polymer Nanoparticles Exhibiting Photothermal Properties

Published on: January 8, 2016

14.1K
Application of a Coupling Agent to Improve the Dielectric Properties of Polymer-Based Nanocomposites
06:34

Application of a Coupling Agent to Improve the Dielectric Properties of Polymer-Based Nanocomposites

Published on: September 19, 2020

6.0K
Author Spotlight: Advancing Energy Solutions Using Nanocomposites as Processed Thermoelectric Materials
09:23

Author Spotlight: Advancing Energy Solutions Using Nanocomposites as Processed Thermoelectric Materials

Published on: May 17, 2024

1.9K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid-State Physics

Background:

  • Solid-state thermal diodes are crucial for thermal management.
  • Polyethylene nanofibers offer unique properties for thermal applications.
  • Existing models often oversimplify material phase transitions.

Purpose of the Study:

  • To demonstrate high-performance solid-state thermal diodes using heterogeneous irradiated-pristine polyethylene nanofiber junctions.
  • To accurately model the phase transition of polyethylene nanofibers.
  • To elucidate the influence of temperature bias and phase transition range on thermal rectification.

Main Methods:

  • Fabrication of heavily-irradiated-pristine (HI-P) and lightly-irradiated-pristine (LI-P) polyethylene nanofiber junctions.
  • Development of a finite temperature range model for polyethylene nanofiber phase transition.
  • Experimental validation of heat flow and rectification performance.

Main Results:

  • HI-P junctions exhibit unidirectional heat flux rectification.
  • LI-P junctions show dual-directional rectification dependent on working temperature.
  • The finite temperature range model accurately predicts experimental heat flow, outperforming step-function models.
  • Rectification factor increases with temperature bias, with a minimum threshold for significant rectification.

Conclusions:

  • The developed polyethylene nanofiber thermal diodes offer high performance.
  • Accurate modeling of phase transition is critical for predicting thermal diode performance.
  • Temperature bias and phase transition range are key factors in optimizing thermal rectification.