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High-performance all-silicon polarizer with 415 nm bandwidth
Optics Letters
|March 15, 2021
Summary
This study presents an all-silicon TE polarizer for the entire optical communication band. The device achieves high extinction ratios and low loss using a shallow-etched silicon-on-insulator waveguide.
Area of Science:
- Photonics and Optical Engineering
- Integrated Optics
- Semiconductor Devices
Background:
- On-chip silicon polarizers are crucial for polarization controllers.
- Limited research exists on all-silicon polarizers covering the full optical communication band due to silicon waveguide dispersion.
Purpose of the Study:
- To demonstrate an all-silicon TE polarizer operating across the entire optical communication band.
- To achieve high polarization extinction ratio (PER) and low insertion loss.
Main Methods:
- Utilized a shallow-etched waveguide on a silicon-on-insulator (SOI) platform.
- Engineered waveguide design to tightly confine TE polarization and weakly confine TM polarization.
- Leveraged differential loss between polarizations for device operation.
Main Results:
- Achieved a maximum insertion loss below 0.25 dB.
- Demonstrated a polarization extinction ratio (PER) greater than 20 dB.
- Operated across an ultrabroadband range from 1260 nm to 1675 nm.
Conclusions:
- The developed shallow-etched all-silicon polarizer is effective for the entire optical communication band.
- The device offers excellent performance in terms of insertion loss and PER.
- This technology is suitable for advanced integrated photonic applications requiring broadband polarization control.
