Related Experiment Video
Updated: Nov 12, 2025

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
Structural and electronic properties of C60 fullerene network self-assembled on metal-covered semiconductor surfaces
A N Mihalyuk1, T V Utas2, S V Eremeev3
1School of Natural Sciences, Far Eastern Federal University, 690922 Vladivostok, Russia.
Abstract:
Using first-principles density functional theory calculations, we made an accurate structural characterization of the C60 superstructures self-assembled on the Tl-adsorbed Si(111) and Ge(111) surfaces, which finds a good agreement with the recent scanning tunneling microscopy observations. Our band structure calculations revealed the semi-metallic character of the C60/Tl/Si(111) system, while the C60/Tl/Ge(111) system was found to show up the pronounced metallic character due to the cascade of the flat bands lying in the vicinity of the Fermi level. The latter is a fingerprint for strong correlation effects in the C60/Tl/Ge(111) system, which makes it a promising object for studying electrical transport phenomena and opens the prospects for its application in the molecular-based electronic devices. We elucidated the details of the molecule-substrate and intermolecular interactions and discussed the character of a charge transfer in both systems.
Related Concept Videos
Metallic Solids
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

