Related Experiment Video
Updated: Nov 12, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Nanoscale Domain Wall Engineered Spin-Triplet Josephson Junctions and SQUID
Ekta Bhatia1, Anand Srivastava2, James Devine-Stoneman2
1School of Physical Sciences, National Institute of Science Education and Research (NISER), HBNI, Bhubaneswar, Odisha 752050, India.
Abstract:
Spin-singlet Cooper pairs convert to spin-triplet Cooper pairs on passing through a magnetically noncollinear structure at a superconductor(S)/ferromagnet(F) interface. In this context, the generation of triplet supercurrents through intrinsic ferromagnetic domain walls, which are naturally occurring noncollinear magnetic features, was proposed theoretically in the past decade. However, an experimental demonstration has been lacking in the literature, particularly because of the difficulty in accessing a single domain wall, which is typically buried between two domains in a ferromagnetic material. By patterning a ferromagnetic nanoconstriction, we have been able to realize a nanoscale S/F/S planar junction, where a single domain wall (pinned at the nanoconstriction) acts as a Josephson barrier. In this geometry, we are able to show the predicted long-range triplet supercurrent across a ferromagnetic barrier exceeding 70 nm. Using this technique, we have demonstrated a ferromagnetic planar nano-SQUID device consisting of two Nb/Ni/Nb spin-triplet Josephson junctions.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
P-N junction
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Spin–Spin Coupling: One-Bond Coupling
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Spin–Spin Coupling Constant: Overview
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must...

