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Hole array enhanced dual-band infrared photodetection
Optics Express
|March 17, 2021
Summary
This study introduces a novel photonic structure for enhanced infrared light detection. The photon-trapping hole-array boosts photoresponse and efficiency in near- and mid-infrared regions, offering polarization-independent performance.
Area of Science:
- Optoelectronics
- Photonics
- Semiconductor Physics
Background:
- Photonic structures are crucial for manipulating optical energy.
- Infrared detectors require enhanced absorption and photoelectric conversion efficiency.
Purpose of the Study:
- To propose and demonstrate a photon-trapping hole-array structure for enhanced photoresponse in InAsSb-GaSb heterostructures.
- To achieve polarization-independent enhancement in both near- and mid-infrared regions.
Main Methods:
- Integration of a symmetrical hole-array structure into a nip InAsSb-GaSb heterostructure.
- Characterization of absorption, photoelectric conversion efficiency, responsivity, and bandwidth under unpolarized incidence at various temperatures.
Main Results:
- Significant enhancements in absorption and photoelectric conversion efficiency in dual infrared bands.
- Responsivity enhancement factors of 1.12 (near-IR) and 1.33 (mid-IR) at room temperature, increasing to 1.71 and 1.79 at 220 K.
- Improved working frequency bandwidth and response speed, with polarization-independent operation.
Conclusions:
- The proposed photon-trapping hole-array structure effectively enhances photoresponse in InAsSb-GaSb heterostructures.
- This approach offers a promising route for high-efficiency, polarization-independent photoelectric conversion across different electromagnetic wave ranges.
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