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Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping
Published on: July 2, 2012
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Design of deterministic light-trapping structures for thin silicon heterojunction solar cells
Optics Express
|March 17, 2021
Summary
Two novel light-trapping designs, Hutong and VOSTBAT, enhance photocurrent in thin silicon heterojunction solar cells. These structures outperform standard light trapping, boosting efficiency for next-generation solar technology.
Area of Science:
- Materials Science
- Renewable Energy Engineering
- Optics
Background:
- Emerging thin silicon heterojunction (SHJ) solar cells require advanced light-trapping strategies to maximize efficiency.
- Existing light-trapping methods may not be optimal for the reduced thickness of next-generation solar devices.
Purpose of the Study:
- To optically design and investigate two novel deterministic light-trapping concepts, "Hutong" and "VOSTBAT", for thin SHJ solar cells.
- To evaluate the performance of these structures in enhancing photocurrent density.
Main Methods:
- Optical design of "Hutong" (patch-like "V" grooves) and "VOSTBAT" (front "V" grooves, back saw-tooth structures).
- Calculation of photocurrent density (Jph) by spectrally resolved absorptance weighted by the AM1.5g spectrum.
- Simulation performed on 60 µm thin wafers under directional, normal incidence.
Main Results:
- Both Hutong and VOSTBAT structures demonstrated superior performance compared to the Lambertian reference.
- Calculated photocurrent densities achieved were 41.72 mA/cm² for Hutong and 41.86 mA/cm² for VOSTBAT.
Conclusions:
- Deterministic light-trapping designs like Hutong and VOSTBAT are effective in enhancing light absorption in thin SHJ solar cells.
- These structures offer a promising pathway for improving the efficiency of future solar energy technologies.
