Related Experiment Video
Updated: Nov 12, 2025
Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Arrayed MoS2 -In0.53 Ga0.47 As van der Waals Heterostructure for High-Speed and Broadband Detection from Visible to
Dae-Myeong Geum1, Suhyun Kim2, JiHoon Khym3
1School of Electrical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, 34141, Republic of Korea.
Abstract:
A high-speed and broadband 5 × 5 photodetector array based on MoS2 /In0.53 Ga0.47 As heterojunction is successfully demonstrated to take full advantage of the type-II band-aligned multilayer MoS2 /In0.53 Ga0.47 As. The fabricated devices exhibit good uniformity in the Raman spectrum and clear rectifying characteristics. The fabricated MoS2 /In0.53 Ga0.47 As photodetectors show good optical performances at a broad wavelength range showing high responsivities corresponding to the detectivity of ≈1010 Jones at -3 V for the incident broadband light from 400 to 1550 nm. A very fast photoresponse is also obtained with a small rise/fall time in the order of microseconds both for visible (638 nm) and shortwave infrared (1310 nm). Finally, the image scanning properties of MoS2 /In0.53 Ga0.47 As devices are demonstrated for visible and infrared light, indicating that the suggested device is one of the promising options for future broadband imager, which can be integrated on the focal plane arrays (FPAs).
