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Updated: Nov 12, 2025

Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
Improved synaptic functionalities of Li-based nano-ionic synaptic transistor with ultralow conductance enabled by
Kyumin Lee1, Myounghoon Kwak1, Wooseok Choi1
1Center for Single Atom-based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
Abstract:
In this study, we investigated the effect of an Al2O3barrier layer in an all-solid-state inorganic Li-based nano-ionic synaptic transistor (LST) with Li3PO4electrolyte/WOchannel structure. Near-ideal synaptic behavior in the ultralow conductance range (∼50 nS) was obtained by controlling the abrupt ion migration through the introduction of a sputter-deposited thin (∼3 nm) Al2O3interfacial layer. A trade-off relationship between the weight update linearity and on/off ratio with varying Al2O3layer thickness was also observed. To determine the origin of the Al2O3barrier layer effects, cyclic voltammetry analysis was conducted, and the optimal ionic diffusivity and mobility were found to be key parameters in achieving ideal synaptic behavior. Owing to the controlled ion migration, the retention characteristics were considerably improved by the Al2O3barrier. Finally, a highly improved pattern recognition accuracy (83.13%) was achieved using the LST with an Al2O3barrier of optimal thickness.
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